SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE

This disclosure relates to a semiconductor device comprising a first n+ region, a first p+ region within the first n+ region, a second n+ region, a second p+ region, positioned between the first n+ region and the second n+ region. The first n+ region, the second n+ region and the second p+ region are positioned within a p- region. A first space charge region and a second space charge region are formed within the p- region. The first space region is positioned between the first n+ region and the second p+ region, and the second space region is positioned between the second p+ region and the second n+ region. 本公开涉及一种半导体装置，包括：第一n+区域；第一p+区域，其位于第一n+区域内；第二n+区域；第二p+区域，其位于第一n+区域与第二n+区域之间。第一n+区域、第二n+区域和第二p+区域位于p-区域内。第一空间电荷区域和第二空间电荷区域形成在p-区域内。第一空间区域位于第一n+区域与第二p+区域之间，第二空间区域位于第二p+区域与第二n+区域之间。