THERMAL INTERFACE MATERIAL METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

A thermal interface material and a semiconductor package including the same are provided. The thermal interface material may include a liquid metal and fine particles disposed inside the liquid metal. The fine particles do not have an oxide layer on the surface thereof. The percentage by volume of t...

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Bibliographische Detailangaben
Hauptverfasser: RYU SEUNG-GEOL, NAM YOUNG-SUK, KIM JAEOON, LEE BANG-WEON, KI SEOK-KAN, HWANG SEUNG-TAE
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A thermal interface material and a semiconductor package including the same are provided. The thermal interface material may include a liquid metal and fine particles disposed inside the liquid metal. The fine particles do not have an oxide layer on the surface thereof. The percentage by volume of the fine particles in the liquid metal including the fine particles therein is from about 1% to about 5%. The thermal conductivity of the liquid metal including the fine particles therein is equal to or greater than about 40 W/m*K. 提供了一种热界面材料和包括该热界面材料的半导体封装件。所述热界面材料可以包括液态金属以及设置在液态金属内部的细颗粒。细颗粒在其表面上不具有氧化物层。在其中包括细颗粒的液态金属中的细颗粒体积百分比为约1%至约5%。在其中包括细颗粒的液态金属的热导率等于或大于约40W/m·K。