Integrated circuit crater experiment method

The invention discloses an integrated circuit crater experiment method. The integrated circuit crater experiment method comprises the following steps: removing a plastic package body of an integrated circuit product to expose a chip surface of the integrated circuit product; soaking the integrated circuit product in an iodine-containing solution to carry out a crater experiment; and cleaning the integrated circuit product subjected to the crater experiment, and observing the integrated circuit product subjected to the crater experiment. 一种集成电路弹坑实验方法。所述集成电路弹坑实验方法包括去除集成电路产品的塑封体以暴露所述集成电路产品的芯片表面；将所述集成电路产品浸泡于含碘熔液中以进行弹坑实验；清洗经过弹坑实验的所述集成电路产品并观察经过弹坑实验的所述集成电路产品。