Silicon piezoresistive pressure sensor core and preparation method thereof
The invention discloses a silicon piezoresistive pressure sensor core and a preparation method thereof, and relates to the technical field of sensors. The invention aims to solve the problem that the high sensitivity of a small-range pressure sensor to a pressure signal is influenced by the nonlinea...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a silicon piezoresistive pressure sensor core and a preparation method thereof, and relates to the technical field of sensors. The invention aims to solve the problem that the high sensitivity of a small-range pressure sensor to a pressure signal is influenced by the nonlinearity of stress and strain of an existing silicon piezoresistive pressure sensor. According to the silicon piezoresistive pressure sensor core, an upper cover and a lower cover are mutually covered together to form a hollow cavity structure, a through hole for communicating a hollow cavity with the outside is formed in the bottom of the lower cover, a pressure guiding channel for communicating the hollow cavity with the outside is formed in the side wall of the upper cover, and a sensitive chip is located in the hollow cavity and covers the through hole. The sensitive chip is electrically connected with the outside through an outer lead. The invention can be applied to the technical field of sensors.
一种硅压阻式压力传感器芯体及其 |
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