Low-pressure chemical vapor deposition growth device of 10BN material for directly detecting neutrons and growth method of low-pressure chemical vapor deposition growth device

The invention discloses a low-pressure chemical vapor deposition growth device of a 10BN material for directly detecting neutrons and a growth method thereof, a source heating furnace is used for heating a growth source to decompose the growth source into a gaseous product, argon or nitrogen is used as a carrier gas of the gaseous product, and after gas mixing in a gas mixing tank is finished, introducing into an alundum tube is carried out for growth of a 10BN film. The growth source used in the growth method is enriched 10B, so that the grown 10BN film has better 10B abundance; according to the growth method, the growth source and the carrier gas are introduced into the reaction chamber after being mixed in the gas mixing tank, so that the growth source and the carrier gas can be uniformly mixed, and the growth rate and quality of the 10BN film can be effectively improved; according to the growth method, a transmission path of a growth source is heated by using a heating coil, so that the loss of a precurso