P-type semiconductor layer growth method, epitaxial layer, LED chip and display screen

The invention relates to a P-type semiconductor layer growth method, an epitaxial layer, an LED chip and a display screen. The P-type semiconductor layer of the epitaxial layer comprises the P-type GaN layer and the first P-type InGaN layer, and In is introduced into the P-type semiconductor layer, so the potential barrier between the P-type semiconductor layer and the P electrode can be reduced, the Mg doping concentration and the activation efficiency are improved, and the hole concentration is further increased. Meanwhile, due to the fact that the heterojunction is formed between the P-type GaN layer and the first P-type InGaN layer and the existence of the heterojunction can improve the concentration of current carriers, the ohmic contact quality of the P-type semiconductor layer can be enhanced through the heterojunction and high doping of the epitaxial layer. The LED chip and the display screen prepared based on the epitaxial layer are high in reliability. 本发明涉及一种P型半导体层生长方法、外延层、LED芯片及显示屏。外延层的P型半导体层中包括P型