Light-emitting chip epitaxial structure, manufacturing method thereof and light-emitting chip

The invention relates to a light-emitting chip epitaxial structure, a manufacturing method thereof and a light-emitting chip. The light-emitting chip epitaxial structure comprises a semiconductor light-emitting laminated layer, wherein the semiconductor light-emitting laminated layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are laminated in sequence, and a first surface of the semiconductor light-emitting laminated layer comprises a plurality of recesses; a plurality of concave coarsening layers, wherein each concave coarsening layer is light-transmitting and is arranged in one of the plurality of recesses, and the plurality of concave coarsening layers are flush with the surface of the first surface of the semiconductor light-emitting laminated layer; and a subsequent film layer which is arranged on the first surface of the semiconductor light-emitting laminated layer. The problem that the light extraction efficiency is weakened to a certain extent due to