SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE

A semiconductor device according to an embodiment of the present disclosure is provided with: a first low-permittivity region disposed in regions between pieces of a first metal in an in-plane direction of a semiconductor layer and lower than the lower surface of the first metal in a layering direction of the semiconductor layer; and a second low-permittivity region disposed in regions between a contact plug and a gate electrode in the in-plane direction and lower than the first low-permittivity region in the layering direction, wherein at least a portion of the second low-permittivity region in plan view differs from that of the first low-permittivity region. 根据本公开实施例的半导体器件设置有：第一低介电常数区域，在半导体层的平面内方向上布置在各个第一金属之间的区域中，并且在半导体层的分层方向上低于第一金属的下表面；以及第二低介电常数区域，在平面内方向上被布置在接触塞和栅电极之间的区域中，并且在分层方向上低于第一低介电常数区域，其中，第二低介电常数区域在平面视图中的至少一部分与第一低介电常数区域的至少一部分不同。