SEMICONDUCTOR DEVICE

This semiconductor device includes: a first semiconductor chip (11) and a second semiconductor chip (12) which have different power source voltages supplied thereto; a connection bonding wire (30) that connects the first semiconductor chip (11) to the second semiconductor chip (12); and a sealing re...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ONO TSUNEHISA, KIKUCHI TOMOHIRA, NISHIOKA TARO, OSUMI YOSHIZO
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:This semiconductor device includes: a first semiconductor chip (11) and a second semiconductor chip (12) which have different power source voltages supplied thereto; a connection bonding wire (30) that connects the first semiconductor chip (11) to the second semiconductor chip (12); and a sealing resin (40) that is provided so as to cover the periphery of the first semiconductor chip (11) and the second semiconductor chip (12) by filling the space between a first lead frame (21) on which the first semiconductor chip (11) is mounted and a second lead frame (22) on which the second semiconductor chip (12) is mounted. The surfaces of regions of the first lead frame (21) and the second lead frame (22) that oppose each other are covered by an insulation and protection film (50) which comprises a material having a dielectric breakdown voltage that is higher than that of the sealing resin (40). 本发明提供一种半导体器件,其包括:被供给的电源电压不同的第一半导体芯片(11)和第二半导体芯片(12);连接第一半导体芯片(11)与第二半导体芯片(12)的连接焊线(30);和埋入于搭载第一半导体芯片(11)的第一引线架(21)与搭载第二半导体芯