Flash switch unit structure and preparation method thereof

The invention discloses a preparation method of a Flash switch unit structure, and belongs to the field of microelectronic devices. A programming tube T1, a signal transmission tube T2 and an erasing tube T3 are prepared on the same substrate. The programming tube T1 is used for performing programming operation of the unit, the erasing tube T3 is used for performing erasing operation of the unit, and the signal transmission tube T2 is connected with a peripheral logic circuit and is responsible for signal transmission. Due to different electron tunneling paths during programming and erasing, the service life of a tunnel oxide layer is greatly prolonged, the durability of the Flash switch unit is improved, the charge retention service life of the Flash switch unit is prolonged, and the Flash switch unit is expected to be used as a high-reliability configuration unit to be applied to a Flash type FPGA. 本发明公开一种Flash开关单元结构的制备方法，属于微电子器件领域。在同一衬底上制备编程管T1、信号传输管T2和擦除管T3。编程管T1用来进行单元的编程操作、擦除管T3用来进行单元的擦除操作、信号传输管T2与外围逻辑电路