SEMICONDUCTOR OPTICAL ELEMENT
A semiconductor optical element comprising a mesa structure (7) in which an active layer is buried. The semiconductor optical element comprises a straight advancement section (A) in which the width of an active layer (3) is uniform, and a spot size converter unit (B) that is positioned further towar...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor optical element comprising a mesa structure (7) in which an active layer is buried. The semiconductor optical element comprises a straight advancement section (A) in which the width of an active layer (3) is uniform, and a spot size converter unit (B) that is positioned further toward the light emission side than the straight advancement section (A), the spot size converter unit (B) being such that the light confinement in the active layer (3) is weaker than that of the straight advancement section (A), and the spot size of the light at the light emission end is greater than the spot size of the light of the straight advancement section. In the same plane parallel to the layer surface of the active layer (3), the average value of the width of the mesa structure (7) of the straight advancement section (A) is a less than the value of the width of the mesa structure (7) at the emission end of the spot size converter unit (B); and at the top part of the mesa structure (7), an electrode is formed s |
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