SUBSTRATE PROCESSING APPARATUS

The present invention relates to a substrate processing apparatus comprising a first electrode and a second electrode, the positions of which can be adjusted in advance in consideration of the difference in thermal expansion coefficients, thus, even if thermal expansion occurs in the first electrode and the second electrode during processing, a short circuit generated by contact between the first electrode and the second electrode is prevented. The substrate processing apparatus of the present invention can prevent a short circuit between the first electrode and the second electrode even in a case where thermal expansion occurs in the first electrode and the second electrode due to an increase in temperature during processing, and can maintain uniformity of a thin film in the substrate processing apparatus for processing a large substrate. 本发明涉及一种衬底处理装置，包括第一电极和第二电极，第一电极和第二电极的位置可以考虑热膨胀系数的差异而提前调整，使得即使在处理期间第一电极和第二电极出现热膨胀的情况下也防止通过第一电极和第二电极之间的接触所产生的短路。即使在第一电极和第二电极由于处理期间温度的上升而出现热膨胀的情况下，本发明的衬底处理装置也可以防止第一电极和第二电极之间的短路