Integrated circuit device and method for manufacturing same

The invention provides an integrated circuit. The integrated circuit device comprises: a substrate; a first fin-shaped activation region and a second fin-shaped activation region extending on a substrate in a first direction; a first gate line and a second gate line which are located on the substrate and are extended in a second direction crossing the first direction, and cross the first and the second fin-shaped activation region, respectively; a first contact structure which is formed on the first fin-shaped activation region on one side of the first gate line, and comes in contact with the first gate line; and a second contact structure formed on the second fin-shaped activation region on one side of the second gate line. The first contact structure comprises a first lower contact comprising a metal silicide material and a first upper contact on the first lower contact. The second contact structure comprises a second lower contact comprising a metal silicide material and a second upper contact on the secon