Formation method of semiconductor structure

An embodiment of the invention provides a formation method of a semiconductor structure. The formation method comprises the following steps of: providing a substrate, a gate dielectric layer and an undoped polycrystalline silicon layer which are sequentially stacked; performing a thermal doping process, and doping first doping ions in the polycrystalline silicon layer; and performing an ion implantation process, and doping second doping ions in a preset region of the polycrystalline silicon layer, wherein a preset distance is formed between the preset region and the surface, deviating from the gate dielectric layer, of the polycrystalline silicon layer in the direction perpendicular to the surface of the substrate. The formation method is conductive to reducing capacitance equivalent thickness of the semiconductor structure, and increasing the capacitance of the semiconductor structure. 本发明实施例提供一种半导体结构的形成方法，包括：提供依次层叠的基底、栅介质层以及未掺杂的多晶硅层；进行热掺杂工艺，在所述多晶硅层内掺杂第一掺杂离子；进行离子注入工艺，在所述多晶硅层的预设区域内掺杂第二掺杂离子，在垂直于所述基底表面的方向上，所述预设