Semiconductor laser based on distributed phase compensation technology

The invention discloses a semiconductor laser based on a distributed phase compensation technology, and relates to the field of optical fiber communication and photon integration. The semiconductor laser comprises a metal n electrode, a buffer layer, a lower respective limiting layer, a light-emitting active layer, an upper respective limiting layer, a corrosion barrier layer, a grating layer, a waveguide layer, a transition layer, a p-type ohmic contact layer, a metal p electrode, a high-reflection film and an anti-reflection film. The high-reflection film and the anti-reflection film are arranged at the two ends of the semiconductor laser respectively, so that the energy utilization rate and the output power of the semiconductor laser are improved; and electrical isolation is formed by etching the waveguide, the semiconductor laser is divided into two or more sections, and the current injection distribution of each section is changed, so that the random reflection phase brought by the high-reflection coatin