Distributed electrode PiN-type beta irradiation battery with thinned P-type region and preparation method of distributed electrode PiN-type beta irradiation battery

The invention relates to a distributed electrode PiN-type beta irradiation battery with a thinned P-type region and a preparation method of the distributed electrode PiN-type beta irradiation battery. The irradiation battery comprises a PiN unit and a radioactive isotope unit located on the PiN unit, each PiN unit comprises an N-type doped 4H-SiC substrate, an N-type doped 4H-SiC epitaxial layer, a P-type doped 4H-SiC epitaxial layer, an N-type ohmic contact electrode, a passivation layer, a P-type ohmic contact electrode and a plurality of groove regions, and the groove regions are distributed in the P-type doped 4H-SiC epitaxial layer at intervals; and the P-type ohmic contact electrode is located on the P-type doped 4H-SiC epitaxial layer except the groove region to form a distributed ohmic contact electrode. According to the irradiation battery, the distributed ohmic contact electrodes are adopted, and meanwhile, the P-type doped 4H-SiC epitaxial layer is thinned to form the groove region, so that the sho