BONDING WAFER STRUCTURE AND METHOD OF MANUFACTURING THE SAME

A bonding wafer structure and a method of manufacturing the same are provided. The bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cm to 20,000 ea/cm , a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 [mu]m, a bow of less than 30 [mu]m, and a warp of less than 60 [mu]m. 本发明提供一种接合用晶片结构及其制造方法，所述接合用晶片结构包括支撑基板、接合层以及碳化硅层。接合层形成在支撑基板的表面，碳化硅层接合在所述接合层上，其中碳化硅层的碳面与接合层直接接触。所述碳化硅层的基面线性差排缺陷(BPD)在1000ea/cm2～20000ea/cm2之间，所述碳化硅层的总厚度变异量(TTV)大于所述支撑基板的总厚度变异量，所述碳化硅层的直径等于或小于所述支撑基板的直径。所述接合用晶片结构的TTV小于10μm、弯曲度(Bow)小于30μm以及翘曲度(Warp)小于60μm。