In-situ PN structure gallium oxide power diode and production method thereof

The invention relates to an in-situ PN structure gallium oxide power diode and a production method thereof. The method comprises the steps: selecting a substrate layer, and preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; etching the drift layer to form a plurality of nano channel structures; preparing an anode on the upper surface of the drift layer; and performing low-temperature annealing process treatment on the device to obtain a gallium oxide power diode, wherein the substrate layer and the drift layer are both made of Si or Sn doped beta-Ga2O3 materials, the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni/Au metal laminated layer, a NiO layer with P-type characteristics is formed at the interface of metal Ni and the drift layer, and the NiO layer and the drift layer form a heterogeneous PN junction structure. According to the production method, the thin NiO layer wit