Manufacturing and processing method for improving seed crystal defects of germanium single crystal

The invention discloses a manufacturing and processing method for improving seed crystal defects of a germanium single crystal, and belongs to the field of crystal processing. The manufacturing and processing method for improving the seed crystal defects of the germanium single crystal comprises the following steps: step 1, drawing a single crystal with a proper size according to the size of a seed crystal chuck and the required size; step 2, necking a section at a taper part needing to be processed in the later period through more detailed manual control; and step 3, adopting slow shouldering, wherein the shouldering speed ranges from 10 mm/h to 15 mm/h, and the shouldering angle is larger than 45 degrees. The resistivity uniformity of the germanium seed crystal is greatly improved, the dislocation density and internal defects of the seed crystal are reduced, and a high-quality seed crystal raw material grows. 本发明公开了一种改善锗单晶籽晶缺陷的制作加工方法，属于晶体加工领域，所述的改善锗单晶籽晶缺陷的制作加工方法采用以下步骤：步骤1、根据籽晶夹头大小和需要尺寸来拉制合适尺寸单晶；步骤2、通过更加细致的人