SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

The present invention improves transistor performance. A semiconductor device according to an embodiment is provided with an insulating film (12) isolating an n-type transistor forming region (Tr1) and a p-type transistor forming region (Tr2) from each other, wherein each of the n-type transistor forming region and the p-type transistor forming region is provided with a gate electrode (13) formed in a first direction on a semiconductor substrate (11), and source/drain regions (22) formed on both sides of the gate electrode in a second direction different from the first direction. The distance from an interface between the insulating film and the source/drain regions to an end of the gate electrode in the second direction differs between the n-type transistor forming region and the p-type transistor forming region. 本发明改善了晶体管性能。根据实施例的半导体装置设置有将n型晶体管形成区域(Tr1)和p型晶体管形成区域(Tr2)彼此隔离的绝缘膜(12)，其中，n型晶体管形成区域和p型晶体管形成区域中的每一个都设置有形成在半导体基板(11)上的第一方向上的栅电极(13)以及在栅电极的两侧沿不同于第一方向的第二方向形成的源极/漏极区域(22)。在第二方向上从绝缘膜和源极/漏极区域之间的界面到栅电极的端部的距离在