High-speed high-voltage large-current modulation circuit

The invention relates to a high-speed high-voltage large-current modulation circuit. A dead-zone control circuit converts an input signal into a complementary signal, the dead-zone time is adjustable, and the requirement for high-speed operation of the modulation circuit is met. A high-side driving...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN XIN, ZHANG DUANWEI, GE SHUO, GE JUNJI, CHEN XIAOQING, AN SHIQUAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a high-speed high-voltage large-current modulation circuit. A dead-zone control circuit converts an input signal into a complementary signal, the dead-zone time is adjustable, and the requirement for high-speed operation of the modulation circuit is met. A high-side driving circuit provides a driving signal for a main power switch tube, and the switching speed of the main power switch tube is improved. The main power switch tube adopts an N-channel MOSFET, so that the current output capability and the voltage withstanding level are improved. An energy storage unit adopts the combination of a tantalum capacitor or an electrolytic capacitor and a ceramic capacitor, so that the withstand voltage level is improved and the top drop of an output modulation signal is reduced; and the ceramic capacitor is disposed proximate to the N-channel MOSFET to reduce the rise time of the modulated output signal. A low-side driving circuit provides a driving signal for a bleeder switch tube in a bleeder