Method for forming micro-electro-mechanical system (MEMS) structure

A pre-cleaning process may be omitted from the eutectic bonding sequence. To remove oxides from one or more surfaces of a device wafer of a micro-electro-mechanical system (MEMS) structure, the duration of an acid-based etch process in a eutectic bonding sequence may be increased relative to the duration of the acid-based etch process when a pre-cleaning process is performed. The increase in duration of the acid-based etch process enables the acid-based etch process to remove oxides from one or more surfaces of the device wafer without using the foregoing pre-cleaning process. This reduces the complexity and cycle time of the eutectic bonding sequence, reduces the risk of adhesion between suspended mechanical components of the EMES structure, and/or reduces the likelihood that the EMES structure may become defective or inoperable during fabrication, and the process yield is increased. 可从共晶接合序列省略预清洁工艺。为了从微机电系统(MEMS)结构的器件晶片的一个或多个表面去除氧化物，相对于在进行预清洁工艺时酸基刻蚀工艺的持续时间，可增加共晶接合序列中的酸基刻蚀工艺的持续时间。酸基刻蚀工艺的持续时间增加使得酸基刻蚀工艺能够在不使用前