Substrate detachment method and plasma processing apparatus
The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a D...
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| creator | UTSUKI YASUSHI SATOYOSHI TSUTOMU |
| description | The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a DC voltage to an adsorption electrode of the electrostatic chuck embedded in a processing container, comprises the following steps that: in a state in which the substrate after plasma processing is electrostatically adsorbed to the electrostatic chuck, a plasma generation unit supplies a gas for eliminating electricity to the inside of the processing container to generate a plasma of the gas for eliminating electricity; raising the substrate by means of a lifting pin while maintaining the plasma of the gas for eliminating electricity, thereby separating the substrate from the electrostatic chuck; and applying a negative DC voltage to the adsorption electrode.
本公开提供一种基板脱离方法和等离子体处理装置，抑制对基板的静电吸附力的下降。是使通过对被埋设于处理容器的内部的静电 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113936986A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113936986A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113936986A3</originalsourceid><addsrcrecordid>eNrjZLAOLk0qLilKLElVSEktSUzOyE3NK1HITS3JyE9RSMxLUSjISSzOTVQoKMpPTi0uzsxLV0gsKEgEaigt5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hobGlsZmlhZmjsbEqAEA8jUwGA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate detachment method and plasma processing apparatus</title><source>esp@cenet</source><creator>UTSUKI YASUSHI ; SATOYOSHI TSUTOMU</creator><creatorcontrib>UTSUKI YASUSHI ; SATOYOSHI TSUTOMU</creatorcontrib><description>The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a DC voltage to an adsorption electrode of the electrostatic chuck embedded in a processing container, comprises the following steps that: in a state in which the substrate after plasma processing is electrostatically adsorbed to the electrostatic chuck, a plasma generation unit supplies a gas for eliminating electricity to the inside of the processing container to generate a plasma of the gas for eliminating electricity; raising the substrate by means of a lifting pin while maintaining the plasma of the gas for eliminating electricity, thereby separating the substrate from the electrostatic chuck; and applying a negative DC voltage to the adsorption electrode.
本公开提供一种基板脱离方法和等离子体处理装置，抑制对基板的静电吸附力的下降。是使通过对被埋设于处理容器的内部的静电</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220114&DB=EPODOC&CC=CN&NR=113936986A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220114&DB=EPODOC&CC=CN&NR=113936986A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UTSUKI YASUSHI</creatorcontrib><creatorcontrib>SATOYOSHI TSUTOMU</creatorcontrib><title>Substrate detachment method and plasma processing apparatus</title><description>The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a DC voltage to an adsorption electrode of the electrostatic chuck embedded in a processing container, comprises the following steps that: in a state in which the substrate after plasma processing is electrostatically adsorbed to the electrostatic chuck, a plasma generation unit supplies a gas for eliminating electricity to the inside of the processing container to generate a plasma of the gas for eliminating electricity; raising the substrate by means of a lifting pin while maintaining the plasma of the gas for eliminating electricity, thereby separating the substrate from the electrostatic chuck; and applying a negative DC voltage to the adsorption electrode.
本公开提供一种基板脱离方法和等离子体处理装置，抑制对基板的静电吸附力的下降。是使通过对被埋设于处理容器的内部的静电</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAOLk0qLilKLElVSEktSUzOyE3NK1HITS3JyE9RSMxLUSjISSzOTVQoKMpPTi0uzsxLV0gsKEgEaigt5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hobGlsZmlhZmjsbEqAEA8jUwGA</recordid><startdate>20220114</startdate><enddate>20220114</enddate><creator>UTSUKI YASUSHI</creator><creator>SATOYOSHI TSUTOMU</creator><scope>EVB</scope></search><sort><creationdate>20220114</creationdate><title>Substrate detachment method and plasma processing apparatus</title><author>UTSUKI YASUSHI ; SATOYOSHI TSUTOMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113936986A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UTSUKI YASUSHI</creatorcontrib><creatorcontrib>SATOYOSHI TSUTOMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UTSUKI YASUSHI</au><au>SATOYOSHI TSUTOMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate detachment method and plasma processing apparatus</title><date>2022-01-14</date><risdate>2022</risdate><abstract>The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a DC voltage to an adsorption electrode of the electrostatic chuck embedded in a processing container, comprises the following steps that: in a state in which the substrate after plasma processing is electrostatically adsorbed to the electrostatic chuck, a plasma generation unit supplies a gas for eliminating electricity to the inside of the processing container to generate a plasma of the gas for eliminating electricity; raising the substrate by means of a lifting pin while maintaining the plasma of the gas for eliminating electricity, thereby separating the substrate from the electrostatic chuck; and applying a negative DC voltage to the adsorption electrode.
本公开提供一种基板脱离方法和等离子体处理装置，抑制对基板的静电吸附力的下降。是使通过对被埋设于处理容器的内部的静电</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Substrate detachment method and plasma processing apparatus |
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