Substrate detachment method and plasma processing apparatus

The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a D...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: UTSUKI YASUSHI, SATOYOSHI TSUTOMU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present disclosure provides a substrate detachment method and a plasma processing apparatus, which suppress a decrease in electrostatic adsorption force to a substrate. A method, for detaching a substrate from an electrostatic chuck, the substrate being electrostatically adsorbed by applying a DC voltage to an adsorption electrode of the electrostatic chuck embedded in a processing container, comprises the following steps that: in a state in which the substrate after plasma processing is electrostatically adsorbed to the electrostatic chuck, a plasma generation unit supplies a gas for eliminating electricity to the inside of the processing container to generate a plasma of the gas for eliminating electricity; raising the substrate by means of a lifting pin while maintaining the plasma of the gas for eliminating electricity, thereby separating the substrate from the electrostatic chuck; and applying a negative DC voltage to the adsorption electrode. 本公开提供一种基板脱离方法和等离子体处理装置,抑制对基板的静电吸附力的下降。是使通过对被埋设于处理容器的内部的静电