Middle-section interconnection structure and manufacturing method

The invention relates to a middle-section interconnection structure and a manufacturing method. In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure is disposed over a substrate and includes a pair of source/drain regions and a gate electrode be...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG YULIAN, LIN HUANZHE, FU JINGFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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