Trench gate MOSFET of integrated fin type SBD structure and manufacturing method thereof

The invention discloses a trench gate MOSFET of an integrated fin type SBD structure and a manufacturing method thereof. The method comprises the steps of etching the upper side of an epitaxial layer to form an SBD contact platform exposed out of the upper side of the epitaxial layer, depositing the upper side of the epitaxial layer at two sides of the SBD contact platform to form a dielectric layer, and etching the dielectric layer to form a metal deposition region; forming ohmic contact regions on the upper sides of a first well region and a second well region, and forming SBD contact regions on the upper side and the two sides of the SBD contact platform, wherein the SBD contact regions and the SBD contact platform are matched to form a fin type SBD structure. The reverse recovery speed of the device is improved and the reverse recovery time Trr is reduced through the fin type SBD structure formed by matching the SBD contact platform and the SBD contact regions, and the SBD contact region is upgraded from