Semiconductor device as well as application and manufacturing method thereof
The invention discloses a semiconductor device as well as application and a manufacturing method thereof. The semiconductor device comprises a substrate, a channel layer arranged on the substrate, a potential barrier layer arranged on the channel layer, a first gallium nitride layer which is arrange...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The invention discloses a semiconductor device as well as application and a manufacturing method thereof. The semiconductor device comprises a substrate, a channel layer arranged on the substrate, a potential barrier layer arranged on the channel layer, a first gallium nitride layer which is arranged on the barrier layer and covers the barrier layer, a second gallium nitride layer which is arranged on the first gallium nitride layer, a third gallium nitride layer which is arranged on the second gallium nitride layer, a first drain electrode which is arranged on the third gallium nitride layer, a first source electrode which is arranged on the third gallium nitride layer, and a first grid electrode which is arranged on the barrier layer; a concave part is formed between the first source electrode and the first drain electrode; the first grid electrode covers the concave part; the first source electrode and the first drain electrode are close to the top of the concave part; the second gallium nitride layer and |
|---|