Semiconductor structure and manufacturing method thereof

The invention discloses a semiconductor structure and a manufacturing method thereof, and the manufacturing method of the semiconductor structure comprises the specific steps: forming a floating gate and a logic gate on a substrate, forming a first source electrode and a first drain electrode at the two sides of the floating gate respectively, and forming a second source electrode and a second drain electrode after the first source electrode and the first drain electrode are formed, sequentially forming a coupling dielectric layer and a polysilicon layer on the substrate, the floating gate and the logic gate, patterning the polysilicon layer to form a control gate covering the floating gate, and forming a lightly doped drain electrode, a second source electrode and a second drain electrode on two sides of the logic gate after the control gate is formed. 本发明公开一种半导体结构及其制作方法，该半导体结构的制作方法的具体步骤包含：在一基底上形成一浮置栅与一逻辑栅、在该浮置栅的两侧分别形成第一源极与第一漏极、在形成该第一源极与该第一漏极后，在该基底、该浮置栅、以及该逻辑栅上依序形成一耦合介电层与一多晶硅层、图案化该多晶硅层，以形成覆盖该浮置栅的控制栅、以及在形成该控制