Nanostructured field effect transistor device and method of forming same

The invention relates to a nanostructured field effect transistor device and a method of forming the same. The method of forming a semiconductor device includes forming a first nanostructure over a first fin protruding higher than a substrate in a first device region of the semiconductor device; forming a second nanostructure over a second fin protruding higher than the substrate in a second device region of the semiconductor device, the first nanostructure and the second nanostructure including a semiconductor material and extending parallel to an upper surface of the substrate; forming a dielectric material around the first nanostructure and around the second nanostructure; forming a first hard mask layer around the first nanostructure in the first device region and around the second nanostructure in the second device region; removing the first hard mask layer from the second device region after forming the first hard mask layer; after removing the first hard mask layer, increasing a first thickness of the