Device and method for controlling Van der Waals epitaxy and remote epitaxy growth modes

The invention discloses a device and a method for controlling Van der Waals epitaxy and remote epitaxy growth modes, which utilize a gallium nitride-graphene substrate to control the selection of the epitaxy growth mode by changing a grid bias voltage applied to a graphene layer. If forward bias voltage is applied to the graphene layer grid electrode, the main carrier type in the graphene is electrons, the polarity of gallium nitride is inhibited, the epitaxy growth mode selects traditional Van der Waals epitaxy, and only a thin film except a two-dimensional Van der Waals gallium nitride single crystal can grow on the graphene. On the contrary, if the external voltage or the reverse bias voltage is not applied to the graphene layer grid electrode, remote epitaxy is selected, and the two-dimensional Van der Waals gallium nitride single crystal thin film grows on the graphene. The problem that the substrate needs to be manufactured for multiple times in the production process due to different graphene thickness