Silicon terminal diamond field effect transistor and preparation method thereof

The invention provides a silicon terminal diamond field effect transistor and a preparation method thereof, and belongs to the technical field of field effect transistor devices. The preparation method comprises the steps of forming a hydrogen terminal on the upper surface of a diamond substrate; fo...

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Bibliographische Detailangaben

Hauptverfasser:	LIU QINGBIN, YU HAO, FENG ZHIHONG, YU CUI, HE ZEZHAO, MA MENGYU, SONG XUBO, ZHOU CHUANGJIE, ZHANG XIONGWEN, GUO JIANCHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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