Silicon terminal diamond field effect transistor and preparation method thereof

The invention provides a silicon terminal diamond field effect transistor and a preparation method thereof, and belongs to the technical field of field effect transistor devices. The preparation method comprises the steps of forming a hydrogen terminal on the upper surface of a diamond substrate; forming a source electrode and a drain electrode on the upper surface of the hydrogen terminal; forming a passivation dielectric layer on the upper surface of the source electrode, the upper surface of the drain electrode and the upper surface of the hydrogen terminal between the source electrode and the drain electrode; removing part of the passivation dielectric layer between the source electrode and the drain electrode so as to enable the upper surface of the hydrogen terminal of the corresponding part to be exposed; forming a SiO2 dielectric layer on the upper surface of the rest passivation dielectric layer and the exposed upper surface of the hydrogen terminal to obtain a silicon terminal corresponding to the e