DCSCR device for optimizing ESD protection performance

The invention belongs to the field of electrostatic discharge (ESD) protection device design, and particularly provides a DCSCR device for optimizing ESD protection performance, which is used for meeting the requirements of low trigger voltage, high sensitivity, low parasitic capacitance, small area and the like of an integrated circuit under an advanced process on ESD protection. By improving the structure of a traditional DCSCR device, N-type heavily doped regions in an N-type well region are arranged above and below a P-type heavily doped region (sequentially arranged in the vertical direction (Y axis)), and the P-type heavily doped region in a P-type well region is arranged above and below the N-type heavily doped region, so that the width of a diode is greatly reduced, and the area of the diode is effectively reduced; moreover, the trigger diode of the DCSCR is embedded into the upper part and the lower part of the SCR trigger path active region in the original position, so that the conduction path of th