Semiconductor structure and forming method thereof
The embodiment of the invention relates to a semiconductor structure and a forming method thereof. In accordance with some embodiments of the present invention, a semiconductor structure comprises: a substrate; a plurality of conductive members over the substrate; and an isolation structure between...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The embodiment of the invention relates to a semiconductor structure and a forming method thereof. In accordance with some embodiments of the present invention, a semiconductor structure comprises: a substrate; a plurality of conductive members over the substrate; and an isolation structure between the conductive members and separating the conductive members from each other. Each of the conductive members includes a first metal layer and a two-dimensional material layer. Another semiconductor structure includes a first conductive member, a dielectric structure over the first conductive member, a second conductive member in the dielectric structure and coupled to the first conductive member, and a wire over the second conductive member and coupled to the second conductive member. In some embodiments, the wire includes a first three-dimensional material layer, a first two-dimensional material layer, and a second three-dimensional material layer. The first two-dimensional material layer is located between the fi |
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