IMPROVED CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS

An ion implantation system has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state, The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state. 离子注入系统具有从射束物质产生离子以形成离子束的源，质量分析器对离子束进行质量分析。加速器接收具有处于第一电荷状态的离子的离子束并且使具有处于第二正电荷状态的离子的离子束射出。加速器具有电荷剥离器、气体源和多个加速器级。电荷剥离器将离子从第一电荷状态转换至第二电荷状态。气体源向电荷剥离器提供诸如六氟化物的高分子量气体，该多个加速器级分别加速离子。终端站支撑将在第二电荷状态下注入离子的工件。