Memory device, memory device structure and method of forming same

The embodiment of the invention relates to a memory device, a memory device structure and a forming method thereof. A magnetic tunnel junction (MTJ) memory cell includes a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack; wherein the bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack. 本公开实施例是有关于一种存储器装置、一种存储器装置结构及其形成方法。一种磁性隧道结(MTJ)存储器单元，包括连接通孔结构、设置在连接通孔结构上的底部电极、设置在底部电极上的存储器材料堆叠以及设置在存储器材料堆叠上的导电接触结构，其中导电接触结构的底表面与存储器材料堆叠的存储器材料层直接接触。