FinFET integrated circuit basic unit

The invention discloses a FinFET integrated circuit basic unit, which relates to the field of microelectronic technology and integrated circuits. The basic unit is of a multi-layer structure, the lowermost layer is a low-doped well region, and the low-doped well region comprises a bottom layer and ridge-shaped protrusions on the bottom layer; isolation layers are arranged on the two sides of the ridge-shaped protrusions, and the upper surfaces of the isolation layers are flush with the upper surfaces of the ridge-shaped protrusions of the low-doped well region; a drain semiconductor region, a lightly-doped drain region, a channel semiconductor region, a lightly-doped source region and a source semiconductor region are sequentially arranged along the upper surface of the ridge-shaped bulge of the lightly-doped well region, and the two side surfaces and the upper surface of the drain semiconductor region are flush with each other; gate electrodes are arranged on the two side faces and the upper surface of the c