SELF-ALIGNED FRONT-END CHARGE TRAP FLASH MEMORY CELL AND CAPACITOR DESIGN FOR INTEGRATED HIGH-DENSITY SCALED DEVICES

Embodiments disclosed herein include a semiconductor device and methods of forming such a device. In an embodiment, the semiconductor device comprises a substrate and a transistor on the substrate. In an embodiment, the transistor comprises a first gate electrode, where the first gate electrode is part of a first array of gate electrodes with a first pitch. In an embodiment, the first gate electrode has a first average grain size. In an embodiment, the semiconductor device further comprises a component cell on the substrate. In an embodiment, the component cell comprises a second gate electrode, where the second gate electrode is part of a second array of gate electrodes with a second pitch that is larger than the first pitch. In an embodiment, the second gate electrode has a second average grain size that is larger than the first average grain size. 本文所公开的实施例包括半导体器件和形成这种器件的方法。在实施例中，所述半导体器件包括：衬底和衬底上的晶体管。在实施例中，晶体管包括：第一栅极电极，其中，第一栅极电极是具有第一间距的第一栅极电极阵列的一部分。在实施例中，第一栅极电极具有第一平均晶粒尺寸。在实施例中，半导体器件还包括在衬底上的部件单元。在实施例中，部件单元包