Cavity-containing silicon wafer on multilayer insulator and preparation method thereof
The invention provides a cavity-containing silicon wafer on a multilayer insulator, which comprises a wafer. The wafer comprises a first surface and a second surface which are oppositely arranged, and a cavity part is arranged in the wafer; the cavity part comprises a first cavity part and a second...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a cavity-containing silicon wafer on a multilayer insulator, which comprises a wafer. The wafer comprises a first surface and a second surface which are oppositely arranged, and a cavity part is arranged in the wafer; the cavity part comprises a first cavity part and a second cavity part, and the first cavity part is a cavity arranged between the first surface and the second surface of the wafer; and the second cavity part is a channel communicated with the first surface and the first cavity part. A first insulating layer is arranged on the inner wall of the cavity part, a first semiconductor layer is arranged in the second cavity part, and the channel is completely filled with the first semiconductor layer. And a second insulating layer is arranged between the first cavity part and the first surface. The invention also provides a preparation method of the cavity-containing silicon wafer on a multilayer insulator. According to the cavity-containing silicon wafer on the multilayer insula |
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