Film preparation method
An embodiment of the invention provides a film preparation method. The method comprises the following steps of respectively placing a first wafer and a second wafer into a first reaction cavity and a second reaction cavity; introducing a first process gas and a first inert gas into the first reactio...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | An embodiment of the invention provides a film preparation method. The method comprises the following steps of respectively placing a first wafer and a second wafer into a first reaction cavity and a second reaction cavity; introducing a first process gas and a first inert gas into the first reaction cavity and the second reaction cavity; conducting radio frequency treatment on the gases in the first reaction cavity and the second reaction cavity; conducting first coating operation; and after the first coating operation is finished, stopping introducing the first process gas, and conducting second coating operation. Based on the method, in the first coating operation process, the deposition rate in the cavity with the small concentration of the first process gas is large; in the second coating operation process, the remaining first process gas in the double cavities can react completely; the deposition rate in the cavity with the large concentration of the first process gas is large; and through the first coa |
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