Device and process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors

The invention discloses a device and a process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors, industrial product gas is used as a raw material, and CO2 impurities in components can be removed to 0.1 ppm or below and metal ion content can be removed to 10 ppt or below by combining high-molecular permeable membrane, metal cation exchange resin and rare-earth metal compound dehydration with high-pressure rectification; the preparation process gets rid of dependence on raw materials in the prior art, hydrogen chloride gases with various qualities are produced while ultra-pure hydrogen chloride gas is produced, tail gas is reduced and easy to treat, and the preparation process is suitable for industrial popularization. 本发明公开了一种半导体用超高纯氯化氢气体的制备装置及其工艺，以工业产品气体为原料，采用高分子渗透膜、金属阳离子交换树脂、稀土金属化合物脱水与高压精馏的结合，可将组分中CO2杂质脱除至0.1ppm以下、金属离子含量脱除至10ppt以下；所述制备工艺摆脱了现有技术对原料的依赖，在生产超高纯氯化氢气体的同时产生多种品质的氯化氢气体，尾气减少的同时易于处理，适用于工业化推广。