Package structure and method of fabricating same

A structure including a first semiconductor die, an interposer and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and conductive vias disposed on the interconnect structure. The interposer includes a dielectric layer and through vias penetrating through the dielectric layer. The first insulating encapsulation laterally encapsulates the first semiconductor die and the interposer, wherein a thickness of the dielectric layer of the interposer substantially equals to a thickness of the first semiconductor die and a thickness of the first insulating encapsulation. 提供一种包括第一半导体管芯、中介层及第一绝缘包封体的结构。第一半导体管芯包括半导体衬底、设置在半导体衬底上的内连线结构及设置在内连线结构上的导通孔。中介层包括介电层及穿透过介电层的穿孔。第一绝缘包封体在侧向上包封第一半导体管芯及中介层，其中中介层的介电层的厚度实质上等于第一半导体管芯的厚度及第一绝缘包封体的厚度。