Film transistor and preparation method thereof

The invention relates to a film transistor and a preparation method thereof. The preparation method of the film transistor comprises the steps: providing a substrate, wherein the substrate comprises a silicon layer and a dielectric layer which are stacked; placing a first mask plate on the dielectri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YANG XIAOTIAN, WANG YANJIE, GUO LIANG, YANG FAN, ZUO HUANHUAN, LYU SA, ZHAO CHUNLEI, GAO XIAOHONG, YAN XINGZHEN, CHI YAODAN, WANG CHAO, YANG JIA, WANG HUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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