Film transistor and preparation method thereof

The invention relates to a film transistor and a preparation method thereof. The preparation method of the film transistor comprises the steps: providing a substrate, wherein the substrate comprises a silicon layer and a dielectric layer which are stacked; placing a first mask plate on the dielectric layer, wherein the first mask plate is provided with a hollow pattern; depositing an active material to at least fill the hollow area in the first mask plate so as to form an active layer with the pattern, and removing the first mask plate; and forming an electrode array on the active layer to obtain the film transistor. According to the invention, the active layer is manufactured by using the mask plate, and the steps of photoresist deposition, photoresist patterning, active material corrosion and the like are omitted, so that the problems of pollution, abrasion and the like of the active layer are avoided, and the device yield is improved. 本发明涉及一种薄膜晶体管及其制备方法。一种薄膜晶体管的制备方法，包括：提供衬底，所述衬底包括层叠的硅层和介电层；在所述介电层上放置第一掩模板，所