Multi-patterning method

The invention relates to a manufacturing method of a semiconductor structure and a multi-patterning method. In the manufacturing process of a side wall structure of the multi-patterning method, an atomic layer etching process is adopted when a side wall layer is etched, so that the problems of collapse deformation, size deviation and the like of a side wall are effectively solved. 本申请涉及半导体结构的制造方法多重图形化方法，本申请中在多重图形化方法的侧墙结构制程工艺中，在进行侧墙层刻蚀时，采用了原子层刻蚀工艺，从而有效解决了侧墙倒塌变形和尺寸偏移等问题。