Device for processing substrate through plasma and method for improving surface appearance of wafer film

The invention discloses a device for processing a substrate through plasma and a method for improving the surface appearance of a wafer film. The device is composed of a substrate supporting piece and a plurality of ceramic pieces, each ceramic piece is provided with side walls of different heights, each ceramic piece can movably sleeve the periphery of the substrate supporting piece, through the mentioned structural design, the area of the side wall of the substrate supporting piece can be adjusted by replacing the ceramic piece sleeving the periphery of the substrate supporting piece, in the using process, plasma distribution is changed, the deposition rate and uniformity are changed accordingly, and therefore the shape of the edge of a thin film is changed; the morphology of the prepared wafer film can be changed by adjusting the structure of device hardware; the method for improving the surface appearance of the wafer film is obtained based on the device; and the device for processing the substrate throug