AZO thin film device with photodiode effect and preparation method thereof

The embodiment of the invention belongs to the technical field of microelectronics, and discloses an aluminum-doped zinc oxide (AZO) thin film device with a photodiode effect and a preparation method thereof. According to the method, the p-Si substrate is used as a substrate, an AZO ceramic target material is deposited onto the substrate through a magnetron sputtering method to obtain an AZO thin film, then the surface of the thin film is plated with a metal top electrode, the surface of the substrate is plated with a metal bottom electrode, and an MOS device structure with the top electrode/AZO thin film/p-Si substrate/bottom electrode is formed. The structure has an obvious photodiode effect and further has the advantages of being high in response speed, and being good in stability. The method has a wide application prospect in the field of photoelectric detection. The preparation process is simple, low in cost and suitable for large-scale production. 本发明实施例属于微电子技术领域，公开了一种具有光电二极管效应的氧化锌掺铝(AZO)薄膜器件及其制备方法。本发明以