Low-temperature co-fired modified NiTa2O6-based microwave dielectric ceramic material and preparation method thereof

The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a low-temperature co-fired modified NiTa2O6-based microwave dielectric ceramic material and a preparation method thereof. Based on the low-melting-point characteristics of CuO and B2O3 and the fact th...

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Hauptverfasser: QU MINGSHAN, YUAN JIANGHUA, XING MENGJIANG, YANG HONGYU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a low-temperature co-fired modified NiTa2O6-based microwave dielectric ceramic material and a preparation method thereof. Based on the low-melting-point characteristics of CuO and B2O3 and the fact that the radius of Cu ions is similar to that of Ni and Ta ions, the chemical general formula of the material is designed as xCuO-(1-x)NiO-[7.42y(xy/14.33)]B2O3-Ta2O5, by adjusting the molar content of all the components from the raw materials, the purpose of synthesizing a NiTa2O6 main crystal phase at the low pre-sintering temperature is achieved, and therefore, the NiTa2O6-based ceramic material with low-temperature sintering characteristic and excellent microwave dielectric property is directly synthesized at one time, and the application range in the field of LTCC (Low Temperature Co-Fired Ceramic) is widened. 本发明属于电子陶瓷及其制造领域,涉及一种低温共烧改性NiTa2O6基微波介质陶瓷材料及其制备方法。本发明基于CuO与B2O3的低熔点特性,且Cu2+离子半径与Ni2+以及Ta5