THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

The invention discloses a three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device may include a first conductive line extending in a first direction, a second conductive line extending in a second direction crossing the first direction, a cell stack at an intersection of the first and second conductive lines, and a gap-fill insulating pattern covering a side surface of the cell stack. The cell stack may include first, second, and third electrodes sequentially stacked, a switching pattern between the first and second electrodes, and a variable resistance pattern between the second and third electrodes. A top surface of the gap-fill insulating pattern may be located between top and bottom surfaces of the third electrode. 公开了一种三维半导体存储器件，可以包括：沿第一方向延伸的第一导线；沿与第一方向交叉的第二方向延伸的第二导线；在第一导线和第二导线的交叉点处的单元堆叠；以及覆盖单元堆叠的侧表面的间隙填充绝缘图案。单元堆叠可以包括：顺序地堆叠的第一电极、第二电极和第三电极；第一电极与第二电极之间的开关图案；以及第二电极与第三电极之间的可变电阻图案。间隙填充绝缘图案的顶表面可以位于第三电极的顶表面与底表面之间。