SINGLE SURFACE POLISHING METHOD
The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a f...
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| creator | OSEKI MASAAKI SUZUKI KENTA |
| description | The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a first condition; and at a time point when the change in the polishing pad temperature changes from rising to falling, switching from the first condition to a second condition to polish the wafer surface. In this manner, edge roll-off can be suppressed by accurately detecting that a natural oxide film has been removed.
本发明提供一种单面抛光方法，其为使用抛光垫进行晶圆的表面的抛光的单面抛光方法，其特征在于，监测所述抛光垫的温度变化，从开始所述抛光时起以第一条件对所述晶圆的表面进行抛光，在所述抛光垫的温度变化从上升变成下降的时间点，从所述第一条件切换成第二条件来对所述晶圆的表面进行抛光。由此，能够正确地检测出自然氧化膜已被去除从而抑制边缘塌边。 |
| format | Patent |
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本发明提供一种单面抛光方法，其为使用抛光垫进行晶圆的表面的抛光的单面抛光方法，其特征在于，监测所述抛光垫的温度变化，从开始所述抛光时起以第一条件对所述晶圆的表面进行抛光，在所述抛光垫的温度变化从上升变成下降的时间点，从所述第一条件切换成第二条件来对所述晶圆的表面进行抛光。由此，能够正确地检测出自然氧化膜已被去除从而抑制边缘塌边。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211207&DB=EPODOC&CC=CN&NR=113766994A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211207&DB=EPODOC&CC=CN&NR=113766994A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OSEKI MASAAKI</creatorcontrib><creatorcontrib>SUZUKI KENTA</creatorcontrib><title>SINGLE SURFACE POLISHING METHOD</title><description>The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a first condition; and at a time point when the change in the polishing pad temperature changes from rising to falling, switching from the first condition to a second condition to polish the wafer surface. In this manner, edge roll-off can be suppressed by accurately detecting that a natural oxide film has been removed.
本发明提供一种单面抛光方法，其为使用抛光垫进行晶圆的表面的抛光的单面抛光方法，其特征在于，监测所述抛光垫的温度变化，从开始所述抛光时起以第一条件对所述晶圆的表面进行抛光，在所述抛光垫的温度变化从上升变成下降的时间点，从所述第一条件切换成第二条件来对所述晶圆的表面进行抛光。由此，能够正确地检测出自然氧化膜已被去除从而抑制边缘塌边。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAP9vRz93FVCA4NcnN0dlUI8PfxDPYAiin4uoZ4-LvwMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ2NzMzNLSxNHY2LUAADXkyG7</recordid><startdate>20211207</startdate><enddate>20211207</enddate><creator>OSEKI MASAAKI</creator><creator>SUZUKI KENTA</creator><scope>EVB</scope></search><sort><creationdate>20211207</creationdate><title>SINGLE SURFACE POLISHING METHOD</title><author>OSEKI MASAAKI ; SUZUKI KENTA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113766994A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>OSEKI MASAAKI</creatorcontrib><creatorcontrib>SUZUKI KENTA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OSEKI MASAAKI</au><au>SUZUKI KENTA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE SURFACE POLISHING METHOD</title><date>2021-12-07</date><risdate>2021</risdate><abstract>The present invention is a single surface polishing method using a polishing pad to polish a wafer surface, the single surface polishing method being characterized by comprising: monitoring a change in the polishing pad temperature; polishing the wafer surface from the polishing start time under a first condition; and at a time point when the change in the polishing pad temperature changes from rising to falling, switching from the first condition to a second condition to polish the wafer surface. In this manner, edge roll-off can be suppressed by accurately detecting that a natural oxide film has been removed.
本发明提供一种单面抛光方法，其为使用抛光垫进行晶圆的表面的抛光的单面抛光方法，其特征在于，监测所述抛光垫的温度变化，从开始所述抛光时起以第一条件对所述晶圆的表面进行抛光，在所述抛光垫的温度变化从上升变成下降的时间点，从所述第一条件切换成第二条件来对所述晶圆的表面进行抛光。由此，能够正确地检测出自然氧化膜已被去除从而抑制边缘塌边。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | SINGLE SURFACE POLISHING METHOD |
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